STP5NK80Z Transistor - N-MOSFET, 800V 2,7A 110W (TO220) Vognmand Helmholt Dataudtag modul 45 i plan

Description

Dataudtag modul 45 i plan udførelse

15 kN Presskæbe U18 mm profil

Kan sættes sammen med 1 modul dåsen

en del af bis ultraprotect 1000 systemet

Det kræver en strømstyrke på 550 mAh og en spænding på 24-42V

STP5NK80Z Transistor - N-MOSFET, 800V 2,7A 110W (TO220) Vognmand Helmholt Dataudtag modul 45 i planTekniske detaljer: Producent: ST MICROELECTRONICS Type transistor: N MOSFET Technologi: SuperMesh Polarisation: Unipolar Drain source spnding: 800V Drain strm: 2,7A Effekt: 110W Hus: TO220 3 Gate source spnding: 30V On state modstand: 2400mOhm Montage: Printhul Egenskaber: ESD beskyttet gate Specifications: Manufacturer: ST MICROELECTRONICS Type of transistor: N MOSFET Technology: SuperMesh Polarisation: unipolar Drain source voltage: 800V Drain

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